Gate-all-around type of semiconductor device and method of fabricating the same

ABSTRACT

A gate-all-around (GAA) transistor device has a pair of pillars that include the source/drain regions, a channel region bridging the source/drain regions, and a gate electrode and gate oxide which surround the channel region. The pillars are formed by providing a mono-crystalline silicon substrate, etching the substrate to form a pair of spaced-apart trenches such that a wall of the mono-crystalline silicon stands between the trenches, filling the trenches with insulative material, implanting impurities into the wall of mono-crystalline silicon, and forming an opening in the wall such that portions of the wall remain as pillars. A sacrificial layer is formed at the bottom of the opening. Then, the channel region is formed atop the sacrificial layer between the pillars. The sacrificial layer is subsequently removed and the gate oxide and gate electrode are formed around the channel region. One or more sidewall spacers are used to establish the effective width of the channel region and/or minimize parasitic capacitance between the source/drain regions and gate electrode.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to semiconductor devices, andmore particularly, the present invention relates semiconductor deviceshaving gate-all-around (GAA) structures, and to methods of fabricatingthe semiconductor devices having gate-all-around (GAA) structures.

2. Description of the Related Art

Semiconductor devices having GAA structures are in particular demandbecause of their excellent performance and due to their suppression ofthe short-channel effect. These advantages are incurred because a thinsilicon layer that forms the channel of a GAA semiconductor device issurrounded by a gate and exclusively controlled thereby. Hence, theelectric field generated at the drain has little influence on thechannel region, i.e., a short-channel effect is suppressed.

A three-dimensional transistor having a GAA structure generally uses asilicon on insulator (SOI) wafer. However, the use of an SOI wafer tomanufacture a semiconductor device having a GAA type transistor presentsfabrication challenges, such as the high initial cost associated withproducing the SOI wafer, and the creation of a floating body effect.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a cost-efficient methodof manufacturing a GM type of semiconductor device.

Another object of the present invention is to provide a GM type ofsemiconductor device that does not exhibit a floating body effect.

Another object of the present invention is to provide a method ofmanufacturing a GM type of semiconductor device which does notundesirably alter the effective channel length of the device.

Another object of the present invention is to provide a GM type ofsemiconductor device that exhibits minimal parasitic capacitance betweenthe source/drain region(s) and the gate.

According to one aspect of the present invention, a GM type oftransistor is manufactured using a bulk silicon wafer and, inparticular, a mono-crystalline silicon wafer, as opposed to an SOIwafer.

According to still another aspect of the present invention, thesource/drain regions are formed using a blanket ion implantationtechnique as opposed to LDD ion implantation.

In this regard, a method of manufacturing a GM type of semiconductordevice according to the present invention includes providing asubstrate, such as a mono-crystalline silicon substrate, etching thesubstrate to form a pair of spaced-apart trenches such that a wall ofthe silicon stands between the trenches, filling the trenches withinsulative material, and ion-implanting impurities into the wall ofsilicon. Subsequently, an opening is formed in the wall to separateportions of the wall, whereby pillars having the source and drainregions of the device are formed. Then, a channel region is formed inthe opening as bridging the source and drain regions. Finally, a gateoxide and gate electrode are formed around the channel region.

According to yet another aspect of the present invention, sidewallspacers are used to provide insulative material at one or more sides ofthe gate electrode.

In this regard, a method of manufacturing a GAA type of semiconductordevice according to the present invention includes providing a substratehaving an active region in the form of a strip extending lengthwise in afirst direction between first and second isolation regions, forming anopening in the active region between the first and second isolationregions, and forming first sidewall spacers within the opening onopposing sidewalls of the active region. Subsequently, a sacrificiallayer is formed at the bottom of the opening. At least a portion of thefirst sidewall spacers is removed to expose the opposing sidewalls ofthe active region. Then, a channel region is formed between the exposedportions of the opposing sidewalls of the active region and over thesacrificial layer. Next, the sacrificial layer is removed, and a gateinsulating layer and a gate electrode are formed around the channelregion.

In one embodiment, the sacrificial layer is formed between the firstsidewall spacers at the bottom of the opening. In this case, the firstsidewall spacers are etched using the sacrificial layer as an etch masksuch that residual portions of the spacers are left on opposite sides ofthe sacrificial layer. The channel region is then formed on thesacrificial layer and residual portions of the first sidewall spacers.

Accordingly, a GM type of semiconductor device according to the presentinvention includes a first pillar comprising a source region, a secondpillar comprising a drain region and spaced from the first pillar, achannel region bridging the source and drain regions, a gate insulatinglayer and a gate electrode which surround the channel region, andinsulative material located laterally of the gate electrode below thechannel region.

In another embodiment, the substrate is etched to form a recess thereinusing the first sidewall spacers as an etch mask. Then, the firstsidewall spacers are removed. The sacrificial layer is formed in therecess. The channel region is formed across the sacrificial layer.

Accordingly, another embodiment of a GM type of semiconductor deviceaccording to the present invention includes a first pillar comprising asource region, a second pillar comprising a drain region and spaced fromthe first pillar, a channel region bridging the source and drainregions, and a gate insulating layer and a gate electrode which surroundthe channel region such that the gate electrode has a lower portiondisposed below the channel region. Accordingly, the width of the channelregion from the source region to the drain region is greater than thewidth of the lower portion of the gate electrode as measured in the samedirection between the source and drain regions.

In either embodiment, mask patterns are formed across the active regionas spaced apart from one another the longitudinal direction of theactive region. The opening in the active region is formed by etching thesubstrate using the mask patterns as an etch mask. Also, second sidewallspacers are formed on the opposing sidewalls of the mask patterns andacross the channel region prior to forming the gate oxide layer and gateelectrode. The insulative material, provided by the residual portions ofthe first sidewall spacers and/or the second sidewall spacers, minimizesparasitic capacitance.

Preferably, the sacrificial layer is formed of an SiGe epitaxial layer.The channel region can thus be formed of an Si epitaxial layer. Thechannel region may have an upper surface that is at the same level asthe upper surfaces of the pillars that comprise the source/drainregions. Alternatively, the channel region may have an elevatedstructure in which the upper surface thereof is situated at a levelabove the upper surfaces of the pillars. As another alternative, thechannel region may have a recessed structure in which the upper surfacethereof is situated at a level below the upper surfaces of the pillars.Also, the channel region may completely overlap the source/drain regionsat respective ends of the channel region.

According to yet another aspect of the present invention, the substrateis counter-doped below the gate electrode. The counter-doping may beperformed using an ion implantation or plasma doping technique.Preferably, the impurities of the counter-doped region are B, BF₂, BF₃or In ions. The counter-doping may be performed in the region of thesubstrate exposed at the bottom of the opening in the active regionbefore the first sidewall spacers are formed. Alternatively, thecounter-doping may be performed in the region of the substrate exposedat the bottom of the opening in the active region after the firstsidewall spacers are formed and before the sacrificial layer is formed.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following detaileddescription of the preferred embodiments thereof made with reference tothe attached drawings in which:

FIGS. 1A, 2A, 3A, 4A, 5A, 6A, 7A, 8A, 9A and 10A are perspective viewsof a GAA type of semiconductor device during the course of itsmanufacture, illustrating a first embodiment of a method ofmanufacturing a GAA type of semiconductor device according toembodiments of the present invention;

FIG. 1B is a sectional view taken along line A-A′ of FIG. 1A;

FIGS. 2B, 3B, 4B. 5B, 6B, 7B, 8B, 9B and 10B are similar sectional viewsof the device shown in FIGS. 2A, 3A, 4A, 5A, 6A, 7A, 8A, 9A and 10A,respectively;

FIG. 4C is a sectional view similar to that of FIG. 4B but showing analternative way of counter-doping the substrate;

FIG. 4D is a sectional of a GAA type of semiconductor device during thecourse of its manufacture, illustrating the forming of a sacrificiallayer in the first embodiment of a method of manufacturing a GM type ofsemiconductor device according to embodiments of the present invention;

FIG. 10C is a sectional view of a GM type of semiconductor device havinga raised channel structure according to an embodiment of the presentinvention;

FIG. 10D is a sectional view of a GM type of semiconductor device havinga recessed channel structure according to an embodiment of the presentinvention;

FIG. 10E is a sectional view of a GM type of semiconductor device havinga channel region whose ends completely overlap the source/drain regionsaccording to an embodiment of the present invention;

FIG. 10F is a sectional view of a GM type of semiconductor device havinga counter-doped region formed according to the technique shown in FIG.4C according to an embodiment of the present invention;

FIGS. 11A, 12A, 13A, 14A, 15A, 16A, 17A, and 18A are perspective viewsof a GM type of semiconductor device during the course of itsmanufacture, illustrating another embodiment of a method ofmanufacturing a GAA type of semiconductor device according to thepresent invention;

FIGS. 11B, 12B, 13B, 14B, 15B, 16B, 17B, and 18B are sectional views ofthe device shown in FIGS. 11A, 12A, 13A, 14A, 15A, 16A, 17A, and 18A,respectively;

FIG. 12C is a sectional view similar to that of FIG. 12B, illustratingthe counter-doping of the substrate;

FIG. 12D is a sectional view similar to that of FIG. 12B, illustratingthe forming of the sacrificial layer;

FIG. 14C is a sectional view similar to that of FIG. 14B, butillustrating the forming of a raised channel structure according to anembodiment of the present invention;

FIG. 14D is a sectional view similar to that of FIG. 14B, butillustrating the forming of a recessed channel structure according to anembodiment of the present invention;

FIG. 18C is a sectional view of another embodiment of a GM type ofsemiconductor device having a raised channel structure according to anembodiment of the present invention;

FIG. 18D is a sectional view of another embodiment of a GM type ofsemiconductor device having a recessed channel structure according tothe present invention; and

FIG. 18E is a sectional view of another embodiment of a GM type ofsemiconductor device having a channel region whose ends completelyoverlap the source/drain regions according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described more fully with reference tothe accompanying drawings. In the drawings, the thicknesses of layersand regions are exaggerated for clarity. Also, like reference numeralsdesignate like elements throughout the drawings.

FIGS. 1A through 10B illustrate a method of manufacturing agate-all-around (GAA) semiconductor device according to the presentinvention. Referring first to FIGS. 1A and 1B, a wall is formed from amono-crystalline silicon semiconductor substrate 10. The wall has apredetermined height as measured from a first lower surface 11 andextends longitudinally in a first direction (e.g., direction X in FIG.1A). In general, the substrate 10 is etched to form trenches therein,and a layer of insulative material is formed within the trenches tothereby provide a plurality of isolation structures 12. The isolationstructures 12 extend in the first direction such that the part of thesemiconductor substrate 10 between the isolation structures 12 forms theaforementioned wall. The first lower surface 11 thus corresponds to thebottom of the trenches, i.e., the area to which the substrate 10 isetched.

The trench isolation technique of forming the isolation structures 12around a portion of the semiconductor substrate 10 will now be describedin even more detail. First, a pad oxide layer (not shown) and a nitridelayer (not shown) are formed on the surface of the semiconductorsubstrate 10. Then, a photoresist layer (not shown) is formed on thenitride layer, and the photoresist layer is patterned usingphotolithography. The pad oxide layer and the nitride layer are thenetched using the patterned photoresist layer as a mask to thereby, inturn, form a mask pattern. Trenches are formed in the semiconductorsubstrate 10 by anisotropically dry-etching the semiconductor substrate10 to a predetermined depth using the mask pattern as an etching mask.Then, a layer of insulative material is formed on the substrate 10 tosuch a thickness that the trenches are filled. Also, the mask pattern isremoved and the structure is planarized. Accordingly, as illustrated inFIG. 1A, the planarized layer of insulative material is left in thetrenches to form the isolation structures 12 along both sides of thewall of the semiconductor substrate 10.

The isolation structures 12 may be formed from any appropriate layer ofinsulative material, such as an oxide layer or a nitride layer. In thepresent embodiment, the isolation structures 12 are formed from ahigh-density plasma (HDP) oxide film. In any case, the material of theisolation structures 12 is based on providing an etch selectivity, withrespect to neighboring materials, in an etching process to be describedin further detail later on.

Next, impurities, such as As, are ion-implanted into the wall of thesemiconductor substrate 10. Then, the resultant structure is thermallytreated to stabilize the ion-implanted region. Accordingly, a firstion-implanted area 14 is formed. The first ion-implanted area 14 willeventually form source/drain regions at the surface of the semiconductorsubstrate 10.

Referring to FIGS. 2A and 2B, a layer of insulative material is formedover the entire surface of the semiconductor substrate 10 after theisolation structures 12 and the wall of the semiconductor substrate 10defined by the isolation structures 12 are formed. Next, the layer ofinsulative material is patterned using photolithography to thereby forminsulative mask patterns 16 extending in a second direction (e.g.,direction Y in FIG. 1A) perpendicular to the direction in which the wallof the semiconductor substrate 10 extends. In the present embodiment,the insulative mask patterns 16 are formed of SiN. However, theinsulative mask patterns 16 can be formed of other materials that willprovide a desired etch selectivity in a subsequent etching process.Also, the insulative mask patterns 16 will be used in the forming of agate electrode using a damascene technique. In this respect, thedistance between the insulative mask patterns 16 establishes theeffective channel length for the gate electrode. Accordingly, theprocess offers an easy control for providing a desired effective channellength for the gate electrode.

Referring to FIGS. 3A and 3B, the portion of the (wall of the)semiconductor substrate 10 exposed between the insulative mask patterns16 and the isolation structures 12 is etched using the insulative maskpatterns 16 and the isolation structures 12 as etch masks, therebyforming an opening 18 in the semiconductor substrate. The opening 18terminates at a second lower surface 13 of the semiconductor substrate10. Although the second lower surface 13 may be situated at any levelrelative to that of the first lower surface 11, the second lower surface13 is preferably situated at a level above that of the first lowersurface 11 so as to facilitate the exposing of a sacrificial layer, aswill be described later on.

In any case, the portions of the wall of the semiconductor substrate 10separated from each other by the opening 18 comprise a plurality ofsemiconductor pillars. Each of the pillars has a first ion-implantedarea 14 at the upper end thereof.

Subsequently, impurities, such as B, BF₂, BF₃ or In ions or the like,are implanted into the region of the semiconductor substrate 10 exposedat the bottom of the opening 18, thereby forming a second ion-implantedarea 20 in the surface of the semiconductor substrate 10. The impuritiesof the second ion-implanted area 20 are of the opposite type compared tothe impurities of the first ion-implanted area 14, i.e., the region ofthe semiconductor substrate 10 exposed at the bottom of the opening 18is counter-doped. Thus, the second ion-implanted area 20 serves as anisolation layer to prevent electrical charges from moving between thesemiconductor pillars.

Referring to FIGS. 4A and 4B, first sidewall spacers 22 are formed alonginner sides of the structure constituted by the respective confrontingsides of the insulative mask patterns 16, the respective confrontingsides of the pillars of the semiconductor substrate 10, and therespective confronting sides of isolation structures 12. Although thefirst insulative spacers 22 may be formed of various insulativematerials such as an oxide, a nitride, or the like, the first insulativespacers 22 are preferably formed of an oxide in consideration of theetch selectivity between the semiconductor substrate 10 and theinsulative mask patterns 16. Furthermore, it is important that the firstinsulative spacers 22 each have an accurate thickness, i.e., a thicknessthat precisely conforms to a design rule, because the thicknesses of theinsulative spacers 22 serve to establish the effective channel length ofthe gate electrode, as will become more clear from the description thatfollows.

However, before that description proceeds, FIG. 4C shows an alternativesequence to the method of the present invention. In particular, FIG. 4Cshows that the ion-implanting of the portion of the semiconductorsubstrate 10 exposed at the bottom of the opening 18 can take placeafter the first insulative spacers 22 are formed. That is, as analternative to what is depicted in FIG. 3B, the second ion-implantedarea 20 can be formed after the first insulative spacers 22 are formed.

Referring now to FIG. 4C, a sacrificial layer 24 is formed on thatportion of the semiconductor substrate 10 exposed between the firstinsulative spacers 22. The sacrificial layer 24 is not present in thefinal semiconductor device. Hence, the sacrificial layer 24 may beformed of any of various materials. However, the sacrificial layer 24 ispreferably of a material that is excellent in terms of its ability to beformed to a desired thickness, e.g., a material that can be formed bybeing grown epitaxially. In the present embodiment, the sacrificiallayer 24 is preferably an SiGe layer. However, as long as the etchselectivity between the silicon of the semiconductor substrate 10 andthe oxide of the first insulative spacers 22 is ensured, the sacrificiallayer 24 may instead be formed using chemical vapor deposition, physicalvapor deposition, or the like. For example, the sacrificial layer 24 maybe formed by chemically vapor-depositing polysilicon on the exposedportion of the semiconductor substrate 10, thermally treating theresultant polysilicon layer, and etching the polysilicon layer.

Referring to FIGS. 5A and 5B, the first insulative spacers 22 are etchedusing the insulative mask patterns 16, the isolation structures 12, andthe sacrificial layer 24 as etch masks so that the sacrificial layer 24and residual portions 22 a of the first insulative spacers 22 are leftwithin the opening 18. As is best shown in FIG. 5B, the etching ispreferably carried out to such an extent that the upper surfaces of theresidual portions 22 a are level with or are disposed beneath the levelof the upper surface of the sacrificial layer 24. This facilitates asubsequent formation of a channel semiconductor layer and contributes tominimizing the parasitic capacitance between the source/drain and thegate.

Referring to FIGS. 6A and 6B, a channel semiconductor layer 26 is formedon the sacrificial layer 24 and the residual portions 22 a of the firstinsulative spacers. The channel semiconductor layer 26 is formed to sucha thickness that it fills the opening 18 and thus bridges upper portionsof the semiconductor pillars that comprise the first ion-implanted area14 of the semiconductor substrate 10. Accordingly, the channelsemiconductor layer 26 serves as the channel of the transistor. In thepresent embodiment, the channel semiconductor layer 26 can be anepitaxially grown silicon layer considering the fine coherence that willexist between such a layer and the mono-crystalline siliconsemiconductor substrate 10. The epitaxially grown silicon layer may besubjected to a thermal treatment for a predetermined period of time in ahydrogen atmosphere so as to cure defects at the surface thereof.Moreover, the overall thickness of the channel semiconductor layer 26 isdependent on the thickness of the sacrificial layer 24 as measured fromthe second lower surface 13. Therefore, the sacrificial layer 24 isformed so as to be situated beneath the level of the surface of thesemiconductor substrate 10 that contacts the insulative mask patterns16.

FIG. 6B shows a channel semiconductor layer 26 whose upper surface islevel with that of each of the semiconductor pillars. However, a GAAsemiconductor device according to the present invention may comprise araised channel structure, as shown in FIG. 6C. In the raised channelstructure, the upper surface of the channel semiconductor layer 26 issituated at a level above that of the upper surfaces of thesemiconductor pillars. Alternatively, as shown in FIG. 6D, a GAAsemiconductor device according to the present invention may comprise arecessed channel structure in which the upper surface of the channelsemiconductor layer 26 is situated at a level below that of the uppersurfaces of the semiconductor pillars.

Referring to FIGS. 7A and 7B, insulative material is deposited over theentire surface of the semiconductor substrate 10. Then, the layer ofinsulative material is anisotropically etched to form second insulativespacers 28 on sidewalls of the insulative mask patterns 16. The secondinsulative spacers 28 may be formed of an oxide, a nitride, or the like.In any case, the second insulative spacers 28 preferably have an etchselectivity with respect to the isolation structures 12 so that thesecond insulative spacers 28 will serve as an etch mask in a subsequentetching process.

Furthermore, as was previously described, the thicknesses of theresidual portions 22 a of the first insulative spacers 22 establish theeffective width W1 of a lower portion of the channel. Similarly, thethicknesses of the second insulative spacers 28 and, more specifically,the thicknesses of the bottom portions of the second insulative spacers28 contacting the channel semiconductor layer 26, establish theeffective width W2 of an upper portion of the channel. Hence, the firstand second insulative spacers 22 and 28 are preferably formed to nearlythe same thickness.

Referring to FIGS. 8A and 8B, the structure is anisotropically etchedusing the second insulative spacers 28, the insulative mask patterns 16,and the channel semiconductor layer 26 as etch masks. Consequently, theexposed portions of the isolation structures 12, and those parts of theresidual portions 22 a of the first insulative spacers which extendalong sidewalls of the sacrificial layer 24, are removed. Thus, thesidewalls of the sacrificial layer 24 are exposed. When the isolationstructures 12 and the first insulative spacers 22 are formed ofmaterials from the same family, for example, an oxide family, thematerials have similar etch selectivities. In this case, the exposedportions of the isolation layers 12 and those parts of the residualportions 22 a which extend along the sidewalls of the sacrificial layer24 are removed during a single etching process. Otherwise, the exposedportions of the isolation layers 12, and those parts of the residualportions 22 a which extend along the sidewalls of the sacrificial layer24 are removed separately by two etching processes.

Referring to FIGS. 9A and 9B, next, the remaining sacrificial layer 24is removed so that a parallelepipedal central portion of the channelsemiconductor layer 26 is left completely exposed.

Referring to FIGS. 10A and 10B, a gate insulative layer 30, for example,a silicon oxide layer, is formed on the exposed rectangular surfaces ofthe channel semiconductor layer 26. A gate insulative layer 30 is alsoformed on that part of the second lower surface 13 of the semiconductorsubstrate 10 which was exposed by the removal of the sacrificial layer24.

Subsequently, gate electrode material, for example, polysilicon, isdeposited on the gate insulative layer 30 formed around the channelsemiconductor layer 26, thereby forming a gate electrode 32. Preferably,the gate electrode 32 completely fills the area from which thesacrificial layer 24 was removed. The resultant structure may beplanarized after the deposition process. Then, a contact hole is formedin each of the insulative mask patterns 16 so as to expose the firstion-implanted area 14. Next, the contact holes are filled with aconductive material to thereby form a source electrode 34 a and a drainelectrode 34 b, whereupon a GAA type of transistor according to thepresent invention is complete.

FIGS. 10C-10F show other embodiments of a GAA type of transistoraccording to the present invention. FIG. 1C shows a GAA type oftransistor according to the present invention, wherein the channelsemiconductor layer 26 has a raised structure as was described inconnection with FIG. 6C. FIG. 10D shows a GAA type of transistoraccording to the present invention, wherein the channel semiconductorlayer 26 has a recessed structure as was described in connection withFIG. 6D. FIG. 10E shows a GM type of transistor according to the presentinvention, wherein the first ion-implanted area 14 lies completelywithin the projection of the rectangular opening extending through thegate electrode 32. That is, the channel region completely overlaps thesource/drain regions at the respective ends of the channel region. FIG.10F shows a GAA type of transistor according to the present invention,wherein the second ion-implanted area 20 is located in the region of thetransistor defined between the residual portions 22 a of the firstinsulative spacers, as was described in connection with FIG. 4C.

FIGS. 11A through 18B illustrate another embodiment of a method ofmanufacturing a GAA semiconductor device according to the presentinvention.

Referring first to FIGS. 11A and 11B, a wall is formed from amono-crystalline silicon semiconductor substrate 10. The wall has apredetermined height as measured from a first lower surface 11 of thesubstrate 10 and extends longitudinally in a first direction. Also, aplurality of isolation structures 12 are formed as extending in thefirst direction alongside the wall. Subsequently, impurities, such asAs, are ion-implanted into the semiconductor substrate 10 so as to forma source/drain region at the surface of the semiconductor substrate 10.The ion-implanted area is thermally treated to stabilize the resultantstructure, whereby a first ion-implanted area 14 is formed.

Next, an insulative material layer is formed over the entire surface ofthe semiconductor substrate 10. Then, the insulative material layer ispatterned using photolithography to thereby form a plurality ofinsulative mask patterns 16 extending in a second directionperpendicular to the first direction in which the wall of thesemiconductor substrate 10 extends. In the present embodiment, theinsulative mask patterns 16 are formed of SiN. Next, that part of thesemiconductor substrate 10 exposed between the insulative mask patterns16 and the isolation layers 12 is etched using the insulative maskpatterns 16 and the isolation layers 12 as etch masks, thereby formingan opening 18 b that terminates at a second lower surface 15 situatedabove the level to which the impurities were implanted in the substrate10. Upper end portions of the wall of the semiconductor substrate 10 areseparated from each other by the opening 18 b, thereby forming aplurality of semiconductor pillars. The first ion-implanted area 14remains on each of the semiconductor pillars.

Referring to FIGS. 12A and 12B, insulative material is deposited overthe entire surface of the semiconductor substrate 10 in which theopening 18 b was formed. Subsequently, the layer of insulative materialis anisotropically etched to form first insulative spacers 22 b whichcover the sides of the opening 18 b and the confronting sidewalls of theinsulative mask patterns 16.

Referring to FIG. 12C, the portion of semiconductor substrate 10 exposedat the bottom of the opening 18 b is etched a predetermined amount usingthe first insulative spacer 22 b as etch masks. The etching processforms a recess whose bottom is defined by a third lower surface 17 ofthe substrate. Next, impurities, such as B, BF₂ or In ions, or the like,are implanted into the semiconductor substrate 10, therebycounter-doping the substrate 10 and forming a second ion-implanted area20 b in the third lower surface 17 of the semiconductor substrate 10.The second ion-implanted area 20 serves as an isolation layer to preventelectrical charges from moving between the semiconductor pillars.Although the third lower surface 17 may be situated at any levelrelative to that of the first lower surface 11, the third lower surface17 is preferably situated at a level above that of the first lowersurface 11 so as to facilitate the exposure of a sacrificial layer, aswill be described later on.

Referring to FIG. 12D, a sacrificial layer 24 b is formed on thatportion of the semiconductor substrate 10 exposed between the firstinsulative spacers 22 b. Preferably, the sacrificial layer 24 b fillsthe recessed portion of the semiconductor substrate 10 and has a flatupper surface level with the second lower surface 15 of the substrate10. To this end, the sacrificial layer 24 b is preferably of a materialthat is excellent in terms of its ability to be formed to a desiredthickness, e.g., a material that can be formed by being grownepitaxially. In the present embodiment, the sacrificial layer 24 ispreferably an SiGe layer. However, as long as the etch selectivitybetween the silicon of the semiconductor substrate 10 and the oxide ofthe first insulative spacers 22 b is ensured, the sacrificial layer 24 bmay instead be formed using chemical vapor deposition, physical vapordeposition, or the like. For example, the sacrificial layer 24 b may beformed by chemically vapor-depositing polysilicon on the exposed portionof the semiconductor substrate 10, thermally treating the resultantpolysilicon layer, and etching the polysilicon layer.

Referring to FIGS. 13A and 13B, the first insulative spacers 22 b arecompletely etched away using the insulative mask patterns 16, theisolation layers 12, the semiconductor substrate 10, and the sacrificiallayer 24 b as etch masks. Therefore, the sacrificial layer 24 b isexposed below the second lower surface 15 of the substrate 10 at thebottom of the central portion of the opening 18 b.

Referring to FIGS. 14A and 14B, a channel semiconductor layer 26 b isformed on the sacrificial layer 24 b. The channel semiconductor layer 26b completely fills the opening 18 b so as to bridge and thereby connectthe semiconductor pillars. More specifically, the channel semiconductorlayer 26 b extends between those portions of the first ion-implantedarea 14 formed on the semiconductor pillars, respectively. Thus, thechannel semiconductor layer 26 b serves as the channel of thetransistor. In the present embodiment, the channel semiconductor layer26 b can be an epitaxially grown silicon layer considering the finecoherence that will exist between such a layer and the mono-crystallinesilicon semiconductor substrate 10. The epitaxially grown silicon layermay be subjected to a thermal treatment for a predetermined period oftime in a hydrogen atmosphere so as to cure defects at the surfacethereof. Moreover, the overall thickness of the channel semiconductorlayer 26 b is such that its upper surface is situated at substantiallythe same level with those of the semiconductor pillars. However, asshown in FIG. 14C, the semiconductor layer 26 b may have a raisedstructure wherein the upper surface thereof is situated above the levelof the upper surfaces of the semiconductor pillars. Alternatively, asshown in FIG. 14D, the semiconductor layer 26 b may have a recessedstructure wherein the upper surface thereof is situated below the levelof the upper surfaces of the semiconductor pillars.

Referring to FIGS. 15A and 15B, insulative material is again depositedover the entire surface of the semiconductor substrate 10. This layer ofinsulative material is anisotropically etched to thereby form secondinsulative spacers 28 b on sidewalls of the insulative mask patterns 16.The second insulative spacers 28 b may be formed of an oxide, a nitride,or the like. In any case, the second insulative spacers 28 b preferablyhave an etch selectivity with respect to the isolation structures 12 sothat the second insulative spacers 28 b will serve as an etch mask in asubsequent etching process.

Furthermore, the thicknesses of the bottom portions of the firstinsulative spacers 22 b establish the effective width of a lower portionof the channel. Similarly, the thicknesses of the second insulativespacers 28 b and, more specifically, the thicknesses of the bottomportions of the second insulative spacers 28 contacting the channelsemiconductor layer 26 b, establish the effective width of an upperportion of the channel. Hence, the first and second insulative spacers22 b and 28 b are preferably formed to nearly the same thickness.

Referring to FIGS. 16A and 16B, the structure is anisotropically etchedusing the second insulative spacers 28 b, the insulative mask patterns16, and the channel semiconductor layer 26 b as etch masks.Consequently, the exposed portions of the isolation layers 12 areremoved so as to expose the sidewalls of the sacrificial layer 24 b.

Referring to FIGS. 17A and 17B, the sacrificial layer 24 b is removed sothat a central portion of the channel semiconductor layer 26 b isexposed.

Referring to FIGS. 18A and 18B, a gate insulative layer 30, for example,a silicon oxide layer, is formed on the exposed surfaces of the channelsemiconductor layer 26 b. A gate insulative layer 30 is also formed onsurfaces of the semiconductor substrate 10 that are exposed by theremoval of the sacrificial layer 24 b.

Subsequently, gate electrode material, for example, polysilicon, isdeposited on the gate insulative layers 30, thereby forming a gateelectrode 32 b. Preferably, the gate electrode 32 b completely fills thearea from which the sacrificial layer 24 b was removed. The resultantstructure may be planarized after the deposition process. Then, acontact hole is formed in each of the insulative mask patterns 16 so asto expose the first ion-implanted area 14. Next, the contact holes arefilled with a conductive material to thereby form a source electrode 34a and a drain electrode 34 b, whereupon a GAA type of transistoraccording to the present invention is complete.

FIGS. 18C-18E show other embodiments of a GAA type of transistoraccording to the present invention. FIG. 18C shows a GAA type oftransistor according to the present invention, wherein the channelsemiconductor layer 26 has a raised structure as was described inconnection with FIG. 14C. FIG. 18D shows a GAA type of transistoraccording to the present invention, wherein the channel semiconductorlayer 26 has a recessed structure as was described in connection withFIG. 14D. FIG. 18E shows a GAA type of transistor according to thepresent invention, wherein the first ion-implanted area 14 liescompletely within the projection of the rectangular opening extendingthrough the gate electrode 32 b. That is, the channel region completelyoverlaps the source/drain regions at the respective ends of the channelregion.

Finally, although the present invention has been particularly shown anddescribed with reference to the preferred embodiments thereof, it willbe understood by those of ordinary skill in the art that various changesin form and details may be made thereto without departing from the truespirit and scope of the present invention as defined by the followingclaims.

1. A method of fabricating a gate-all-around (GAA) transistor device,comprising: providing a substrate having an active region in the form ofa strip extending lengthwise in a first direction between first andsecond isolation regions; forming an opening in the active regionbetween the first and second isolation regions; forming sidewall spacerswithin the opening on opposing sidewalls of the active region; forming asacrificial layer at the bottom of the opening between the sidewallspacers; removing upper portions of the sidewall spacers to expose atleast upper portions of the opposing sidewalls of the active region,while leaving residual portions of the sidewall spacers at the bottom ofsaid opening; forming a channel region between the exposed portions ofthe opposing sidewalls of the active layer and over the sacrificiallayer and the residual portions of the sidewall spacers; subsequentlyremoving the sacrificial layer; and subsequently forming a gateinsulating layer and a gate electrode within the opening around thechannel region.
 2. The method of claim 1, wherein said forming anopening in the active region comprises forming mask patterns extendingacross the active region and spaced apart from one another in said firstdirection so as to have opposing sidewalls, and etching the activeregion using the mask patterns as an etch mask, and further comprisingforming second sidewall spacers on the opposing sidewalls of the maskpatterns and across the channel region prior to forming the gate oxidelayer and gate electrode.
 3. The method of claim 1, wherein said formingof the sacrificial layer comprises epitaxially growing SiGe at thebottom of the opening between the sidewall spacers.
 4. The method ofclaim 1, wherein said forming a channel region between the exposedportions of the opposing sidewalls of the active layer comprisesepitaxially growing Si over the sacrificial layer and the residualportions of the sidewall spacers.
 5. The method of claim 1, wherein saidproviding a substrate having an active region in the form of a stripcomprises providing a mono-crystalline silicon substrate, etching saidsubstrate to form a pair of spaced-apart trenches therein extending insaid first direction, whereby a wall of the mono-crystalline siliconstands between the trenches, filling the trenches with insulativematerial to form trench isolation structures, and implanting impuritiesinto the wall of mono-crystalline silicon.
 6. The method of claim 5,wherein said forming an opening in the active region comprises formingmask patterns extending across said wall and spaced apart from oneanother in said first direction so as to have opposing sidewalls, andetching the wall using the mask patterns as an etch mask.
 7. The methodof claim 6, wherein the etching of the wall using the mask patterns asan etch mask is controlled such that the bottom of said opening issituated at a level above the bottom of each of said trenches.
 8. Themethod of claim 6, and further comprising forming second sidewallspacers on the opposing sidewalls of the mask patterns and across thechannel region prior to forming the gate oxide layer and gate electrode.9. The method of claim 8, wherein the second sidewall spacers are formedso as to also extend across the isolation structures, and said removingthe sacrificial layer comprises etching away portions of the isolationstructures exposed between said second sidewall spacers, andsubsequently etching away the sacrificial layer.
 10. The method of claim1, and further comprising implanting impurities into the entire regionof the substrate exposed at the bottom of said opening before thesidewall spacers are formed.
 11. The method of claim 1, and furthercomprising implanting impurities into the entire region of the substrateexposed at the bottom of said opening after the sidewall spacers areformed. 12-20. (canceled)
 21. A method of fabricating a gate-all-around(GAA) transistor device, comprising: providing a substrate having anactive region in the form of a strip extending lengthwise in a firstdirection between first and second isolation regions; forming an openingin the active region between the first and second isolation regions;forming sidewall spacers within the opening on opposing sidewalls of theactive region; subsequently forming a recess in the substrate betweenthe sidewall spacers; forming a sacrificial layer in the recess;removing the sidewall spacers to expose the opposing sidewalls of theactive region; forming a channel region between the exposed oppositesidewalls of the active layer and over the sacrificial layer; removingthe sacrificial layer; forming a gate insulating layer and gateelectrode which surround the bridge channel region.
 22. The method ofclaim 21, wherein said forming an opening in the active region comprisesforming mask patterns extending across the active region and spacedapart from one another in said first direction so as to have opposingsidewalls, and etching the active region using the mask patterns as anetch mask.
 23. The method of claim 21, wherein said forming of thesacrificial layer comprises epitaxially growing SiGe in said recess. 24.The method of claim 21, wherein said forming a channel region betweenthe exposed portions of the opposing sidewalls of the active layercomprises epitaxially growing Si over the sacrificial layer.
 25. Themethod of claim 21, wherein said providing a substrate having an activeregion in the form of a strip comprises providing a mono-crystallinesilicon substrate, etching said substrate to form a pair of spaced-aparttrenches therein extending in said first direction, whereby a wall ofthe mono-crystalline silicon stands between the trenches, filling thetrenches with insulative material to form trench isolation structures,and implanting impurities into the wall of mono-crystalline silicon. 26.The method of claim 25, wherein said forming an opening in the activeregion comprises forming mask patterns extending across said wall andspaced apart from one another in said first direction so as to haveopposing sidewalls, and etching the wall using the mask patterns as anetch mask.
 27. The method of claim 26, wherein the etching of the wallusing the mask patterns as an etch mask is controlled such that thebottom of said opening is situated at a level above the bottom of eachof said trenches.
 28. The method of claim 26, and further comprisingforming second sidewall spacers on the opposing sidewalls of the maskpatterns and across the channel region prior to forming the gate oxidelayer and gate electrode.
 29. The method of claim 28, wherein the secondsidewall spacers are formed so as to also extend across the isolationstructures along opposing sidewalls of said mask patterns, respectively,and said removing the sacrificial layer comprises etching away portionsof the isolation structures exposed between said second sidewallspacers, and subsequently etching away the sacrificial layer.
 30. Themethod of claim 21, further comprising implanting impurities into theentire region of the substrate exposed at the bottom of said openingafter the sidewall spacers are formed. 31-39. (canceled)
 40. A method ofmanufacturing a gate-all-around (GAA) transistor device, comprising:providing a silicon substrate; etching the substrate to form a pair ofspaced-apart trenches such that a wall of the silicon is left standingbetween the trenches; filling the trenches with insulative material;ion-implanting impurities into the substrate; subsequently forming anopening in the wall to separate portions of the wall, thereby formingspaced-apart pillars of silicon implanted with the impurities, regionsof the pillars implanted with the impurities constituting source anddrain regions, respectively; forming a channel region in the opening asbridging the source and drain regions; and forming a gate oxide and gateelectrode around the channel region.
 41. The method of claim 40, whereinsaid forming an opening in the wall comprises forming mask patternsextending across the wall and spaced apart from one another in thelongitudinal direction of the wall so as to have opposing sidewalls, andetching the active region using the mask patterns as an etch mask. 42.The method of claim 40, further comprising implanting impurities in thesubstrate at the bottom of said opening.
 43. The method of claim 40, andfurther comprising forming a sacrificial layer at the bottom of saidopening before the channel region is formed, and removing thesacrificial layer after the channel region is formed and before the gateoxide and gate electrode are formed.